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| SD103A-SD103C Vishay Semiconductors Small Signal Schottky Barrier Diodes Features D Integrated protection ring against static discharge D Low capacitance D Low leakage current D Low forward voltage drop Applications HF-Detector Protection circuit Small battery charger AC-DC / DC-DC converters 94 9367 Order Instruction Type SD103A SD103B SD103C Type Differentiation VR=40 V VF@IF20mA max 0 37 V V, max. 0.37 VR=30 V VF@IF20mA max 0 37 V V, max. 0.37 VR=20 V VF@IF20mA max 0 37 V V, max. 0.37 Ordering Code SD103A-TAP SD103A-TR SD103B-TAP SD103B-TR SD103C-TAP SD103C-TR Remarks Ammopack Tape and Reel Ammopack Tape and Reel Ammopack Tape and Reel Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage g Peak forward surge current Power dissipation Junction temperature Storage temperature range tp=300ms, square pulse l=4 mm, TL=constant Test Conditions Type SD103A SD103B SD103C Symbol VR VR VR IFSM Ptot Tj Tstg Value 40 30 20 15 400 125 -65...+150 Unit V V V A mW C C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=4 mm, TL=constant Symbol RthJA Value 250 Unit K/W Document Number 85633 Rev. 1, 22-Nov-00 www.vishay.com 1 (4) SD103A-SD103C Vishay Semiconductors Electrical Characteristics Tj = 25_C Parameter Reverse Breakdown Voltage IR=10mA m Test Conditions Type Symbol Min Typ Max Unit SD103A V(BR)R 40 V SD103B V(BR)R 30 V SD103C V(BR)R 20 V SD103A IR 5 mA SD103B IR 5 mA SD103C IR 5 mA VF 0.37 V VF 0.6 V CD 50 pF trr 10 ns VR= 30 V VR= 20 V VR= 10 V IF=20mA Forward voltage drop IF=200mA Junction capacitance VR= 0 V, f= 1MHz Reverse recovery time IF=IR=50 to 200mA, recover to 0.1 IR Leakage current g Characteristics (Tj = 25_C unless otherwise specified) 1000 1000.000 100 100.000 I F - Forward Current ( mA) 10 10.000 1 1.000 0.100 0.1 0.010 0.01 0.001 0 100 200 300 400 500 600 700 800 900 1000 16765 10000 I R - Reverse Current ( mA ) 1000 100 10 1 0 16767 20 40 60 80 100 120 140 160 VF - Forward Voltage ( mV ) Tj - Junction Temperature ( C ) Figure 1. Forward Current vs. Forward Voltage 5 4 3 2 1 0 0 16766 Figure 3. Reverse Current vs. Junction Temperature 30 f=1MHz CD - Diode Capacitance ( pF ) 25 20 15 10 5 0 I F - Forward Current ( A) 0.5 1.0 1.5 2.0 16768 0 5 10 15 20 25 30 VF - Forward Voltage ( V ) VR - Reverse Voltage ( V ) Figure 2. Forward Current vs. Forward Voltage Figure 4. Diode Capacitance vs. Reverse Voltage www.vishay.com 2 (4) Document Number 85633 Rev. 1, 22-Nov-00 SD103A-SD103C Vishay Semiconductors Typ. Non Repetitve Forward Surge Current (A - tot 25 20 15 10 5 0 0.1 1.0 tp - Pulse width ( ms ) 10.0 16769 Figure 5. Typ. Non Repetitive Forward Surge Current vs. Pulse width Dimensions in mm Cathode Identification 0.55 max. technical drawings according to DIN specifications 94 9366 I 1.7 max. Standard Glass Case 54 A 2 DIN 41880 JEDEC DO 35 Weight max. 0.3 g 26 min. 3.9 max. 26 min. Document Number 85633 Rev. 1, 22-Nov-00 www.vishay.com 3 (4) SD103A-SD103C Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.com 4 (4) Document Number 85633 Rev. 1, 22-Nov-00 |
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